simulation
2D Device Lab
Explore a monolayer MoS2 back-gate FET in an interactive 3D workspace: staged device layers, camera views, gate/drain bias and ideal current curves. Educational model; not an experimentally calibrated device simulator.
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Overview

Features
- Interactive staged device layers and camera transitions
- Gate/drain controls linked to ideal current curves and planar electron drift markers
- Separate ideal 1H-MoS2 atomic inset at angstrom scale
- Scientific assumptions, references, independent AI review and JSON parameter export retained
Version history
First public browser release of the reviewed interactive educational workspace.
Updates & usage guides
Follow our WeChat and Xiaohongshu accounts for 2D Device Lab version updates, tutorials and case studies.
WeChat Official Account
迷之炼金术士
WeChat ID:wband2046

Xiaohongshu
向天歌
Xiaohongshu ID:231054605
